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CED4279

CET
Part Number CED4279
Manufacturer CET
Description Dual MOSFET
Published May 7, 2007
Detailed Description Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279 D1/D2 FEATURES 40V , 14A , RDS(ON) = 3...
Datasheet PDF File CED4279 PDF File

CED4279
CED4279

Overview
Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279 D1/D2 FEATURES 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 46mΩ @VGS = 4.
5V.
-40V , -9A , RDS(ON) = 72mΩ @VGS = 10V.
RDS(ON) = 110mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-252-4L package.
S1 G1 S2 G2 CEU SERIES TO-252-4L D1/D2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol N-Channel VDS VGS ID e IDM PD TJ,Tstg 40 P-Channel 40 Units V V A A W W/ C C ±20 14 56 10.
4 ...


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