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CED4201

Chino-Excel Technology
Part Number CED4201
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS ...
Datasheet PDF File CED4201 PDF File

CED4201
CED4201

Overview
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V.
RDS(ON) = 36mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED4201/CEU4201 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -40 Units V V A A W W/ C C ±20 -28 -112 38 0.
25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating...


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