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CED6030L

CET
Part Number CED6030L
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS...
Datasheet PDF File CED6030L PDF File

CED6030L
CED6030L

Overview
CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS(ON) = 15.
5mΩ @VGS = 10V.
RDS(ON) = 22mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 40 120 50 0.
3 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W 1998.
March 6 - 78 http://www.
cetsemi.
com CED6030L/CEU6030L Electrical Characteristics Parameter Off Characteristics Drai...


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