DatasheetsPDF.com

CED603AL

Chino-Excel Technology
Part Number CED603AL
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Sep 17, 2014
Detailed Description CED603AL/CEU603AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 22mΩ @VGS = 10V. RDS(O...
Datasheet PDF File CED603AL PDF File

CED603AL
CED603AL

Overview
CED603AL/CEU603AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 22mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 20 77 50 0.
3 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W 1998.
March 6 - 86 http://www.
cetsemi.
com CED603AL/CEU603AL Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 25A 0.
95 VDS = 24V, ID = 20A, VGS = 10V VDD = 15V, ID = 20A, VGS = 10V, RGEN = 24Ω 15 55 95 100 20 3 5 20 1.
3 30 110 150 130 26 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 20A VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)