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CED63A3

CET
Part Number CED63A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4...
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CED63A3
CED63A3

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V.
RDS(ON) = 14mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED63A3/CEU63A3 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 55 150 57 0.
45 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
2 50 Units C/W C/W Details are subject to change without notice .
1 Rev 2.
2006.
Nov http://www.
cetsemi.
com CED63A3/CEU63A3 Electrical Char...


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