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CED6355

CET
Part Number CED6355
Manufacturer CET
Description P-Channel MOSFET
Published Oct 1, 2015
Detailed Description CED6355/CEU6355 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -26A, RDS(ON) = 42mΩ @V...
Datasheet PDF File CED6355 PDF File

CED6355
CED6355

Overview
CED6355/CEU6355 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -26A, RDS(ON) = 42mΩ @VGS = -10V.
RDS(ON) = 65mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -60 ±20 -26 -104 50 0.
4 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
5 50 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to ...


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