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BTD1857AL3

Cystech Electonics
Part Number BTD1857AL3
Manufacturer Cystech Electonics
Description NPN Epitaxial Planar Transistor
Published May 11, 2007
Detailed Description CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Spec. No. : C855L3 Issued Date : 2005.06.1...
Datasheet PDF File BTD1857AL3 PDF File

BTD1857AL3
BTD1857AL3

Overview
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Spec.
No.
: C855L3 Issued Date : 2005.
06.
17 Revised Date : 2010.
12.
31 Page No.
: 1/7 Description • High BVCEO • High current capability • Complementary to BTB1236AL3 • Pb-free lead plating package Symbol BTD1857AL3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.
5 3 5 150 -55~+150 Unit V V V A A W °C °C BTD1857AL3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C855L3 Issued Date : 2005.
06.
17 Revised Date : 2010.
12.
31 Page No.
: 2/7 Characteristics (Ta=25°C) Symbol Min.
Typ.
Max.
Unit Test Conditions BVCBO 180 - - V IC=50µA, IE=0 BVCEO 160 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=50µA, IC=0 ICBO - - 1 µA VCB=160V, IE=0 IEBO - - 1 µA VEB=4V, IC=0 *VCE(sat) - - 0.
6 V IC=1A, IB=100mA *VBE(on) - - 1.
5 V VCE=2V, IC=150mA hFE1 180 - 390 - VCE=2V, IC=150mA hFE2 50 - - - VCE=2V, IC=500mA fT - 140 - MHz VCE=5V, IC=150mA Cob - 27 - pF VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD1857AL3 Package SOT-223 (Pb-free lead plating package) Shipping 2500 pcs / Tape & Reel Marking DQ BTD1857AL3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C855L3 Issued Date : 2005.
06.
17 Revised Date : 2010.
12.
31 Page No.
: 3/7 Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Tj=125℃ Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) Current Gain---HFE Saturation Voltage---(mV) 100 Tj=25℃ Tj=75℃ 10 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 1000 Tj=25℃ 100 Tj=125℃ 10 1...


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