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BTD1857AT3

Cystech Electonics
Part Number BTD1857AT3
Manufacturer Cystech Electonics
Description NPN Epitaxial Planar Transistor
Published May 11, 2007
Detailed Description CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Spec. No. : C855T3 Issued Date : 2004.12.1...
Datasheet PDF File BTD1857AT3 PDF File

BTD1857AT3
BTD1857AT3

Overview
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Spec.
No.
: C855T3 Issued Date : 2004.
12.
15 Revised Date :2018.
07.
02 Page No.
: 1/6 Description  High BVCEO  High current capability  Complementary to BTB1236AT3  Pb-free lead plating and halogen-free package Symbol BTD1857AT3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTD1857AT3-0-BL-X BTD1857AT3-0-UH-X Package TO-126 (Pb-free lead plating and halogen-free package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton 60 pcs/ tube, 40 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube, 40 tubes/box Product rank, zero for no rank products Product name BTD1857AT3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 280 200 5 1.
5 3 1 20 150 -55~+150 Spec.
No.
: C855T3 Issued Date : 2004.
12.
15 Revised Date :2018.
07.
02 Page No.
: 2/6 Unit V V V A A W W C C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 6.
25 125 Unit C/W C/W Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min.
280 200 5 0.
1 0.
5 180 30 - Typ.
140 27 Max.
1 1 0.
6 1.
5 390 - Unit V V V µA µA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=280V, IE=0 VEB=5V, IC=0 IC=1A, IB=100mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380µs, Duty Cycle2% BTD1857AT3 CYStek Product Sp...


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