DatasheetsPDF.com

IRFP22N60K

International Rectifier
Part Number IRFP22N60K
Manufacturer International Rectifier
Description SMPS MOSFET
Published May 30, 2007
Detailed Description PD - 94414A SMPS MOSFET IRFP22N60K HEXFET® Power MOSFET Applications VDSS RDS(on) typ. l Hard Switching Primary or PF...
Datasheet PDF File IRFP22N60K PDF File

IRFP22N60K
IRFP22N60K


Overview
PD - 94414A SMPS MOSFET IRFP22N60K HEXFET® Power MOSFET Applications VDSS RDS(on) typ.
l Hard Switching Primary or PFS Switch 600V 240mΩ l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case ) ID 22A TO-247AC Max.
22 14 88 370 2.
9 ± 30 18 -55 to + 150 300 Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ.
––– ––– ––– Max.
380 22 37 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case† Case-to-Sink, Flat, Greased Surface Junction-to-Ambient† Typ.
––– 0.
24 ––– Max.
0.
34 ––– 40 Units °C/W www.
irf.
com 1 8/26/04 IRFP22N60K Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
600 ––– ––– 3.
0 ––– ––– ––– ––– Typ.
––– 0.
30 240 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 280 m Ω VGS = 10V, ID = 13A „ 5.
0 V VDS = VGS, ID = 250µA 50 µA VDS = 600V, VGS = 0V 250 µA VDS = 480V, VGS = 0V, TJ = 125°C 100 VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)