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HYB39S256160

Siemens Semiconductor
Part Number HYB39S256160
Manufacturer Siemens Semiconductor
Description (HYB39S256xxx) 256 MBit Synchronous DRAM
Published Jun 10, 2007
Detailed Description 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: -8 -8B 100 10 6 12 7 -10 ...
Datasheet PDF File HYB39S256160 PDF File

HYB39S256160
HYB39S256160

Overview
256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4, × 8) • Data Mask for byte control (× 16) • Auto Refresh (CBR) and Self Refresh • Suspend Mode and Power Down Mode • 8192 refresh cycles/64 ms 7,8 µ • Random Column Address every CLK (1-N Rule) • Single 3.
3 V ± 0.
3 V Power Supply • LVTTL Interface versions • Plastic Packages: P-TSOPII-54 400mil width (× 4, × 8, × 16) • -8 part for PC100 2-2-2 operation -8B part for PC100 3-2-3 operation -10 part for PC66 2-2-2 operation fCK tCK3 tAC3 tCK2 tAC2 • • • • www.
DataSheet4U.
com 125 8 6 10 6 Fully Synchronous to Positive Clock Edge 0 to 70 °C operating temperature Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 3, 4 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Bur...


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