DatasheetsPDF.com

ZXMHC6A07T8

Zetex Semiconductors
Part Number ZXMHC6A07T8
Manufacturer Zetex Semiconductors
Description COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
Published Jun 17, 2007
Detailed Description ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= ...
Datasheet PDF File ZXMHC6A07T8 PDF File

ZXMHC6A07T8
ZXMHC6A07T8


Overview
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.
300 ; ID= 1.
8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.
425 ; ID= -1.
5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES • Low On - Resistance • Fast switching speed • Low threshold • Low gate drive www.
DataSheet4U.
com SM8 S1 G1 S4 G4 • SM8 package D1, D2 D3, D4 APPLICATIONS • Motor drive G2 S2 S3 G3 ORDERING INFORMATION PINOUT DIAGRAM DEVICE ZXMHC6A07T8TA ZXMHC6A07T8TC REEL SIZE 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING • ZXMH C6A07 Top View ISSUE 1 - JULY 2004 1 SEMICONDUCTORS ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID N-Channel 60 Ϯ 20 1.
8 1.
4 1.
6 8.
7 2.
3 8.
7 P-Channel -60 Ϯ 20 -1.
5 -1.
2 -1.
3 -7.
5 -2.
1 -7.
5 UNIT V V A A A A A W mW/°C W mW/°C °C I DM IS I SM PD PD T j :T stg 1.
3 10.
4 1.
7 13.
6 -55 to +150 THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (a)(d) (b)(d) SYMBOL R θ JA R θ JA VALUE 96 73 UNIT °C/W °C/W Notes (a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.
6mm at t ≤ 10sec.
(c) Repetitive rating - 50mm x 50mm x 1.
6mm FR4 PCB, D = 0.
2, pulse width 300␮S pulse width limited by maxim...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)