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ZXMHC6A07N8

Diodes
Part Number ZXMHC6A07N8
Manufacturer Diodes
Description MOSFET H-Bridge
Published Jul 7, 2009
Detailed Description www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-...
Datasheet PDF File ZXMHC6A07N8 PDF File

ZXMHC6A07N8
ZXMHC6A07N8


Overview
www.
DataSheet4U.
com A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.
25Ω @ VGS= 10V N-CH 60V 3.
2nC 0.
35Ω @ VGS= 4.
5V 0.
40Ω @ VGS= -10V P-CH -60V 5.
1nC 0.
60Ω @ VGS= -4.
5V -1.
2A 1.
5A -1.
4A ID TA= 25°C 1.
8A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
P1G P1S/P2S P2G Features • 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications • • DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC6A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 6A07 Issue 1.
0 - March 2009 © Diodes Incorporated 1 www.
diodes.
com www.
DataSheet4U.
com ZXMHC6A07N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current @ VGS= 10V; TA=25°C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 60 ±20 1.
80 1.
40 1.
39 1.
42 Pchannel -60 ±20 -1.
42 -1.
28 -1.
28 -1.
33 -6.
03 -1.
00 -6.
03 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 7.
10 1.
00 7.
10 0.
87 6.
94 1.
36 10.
9 0.
90 7.
19 A A A W mW/°C W mW/°C W mW/°C °C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (a) (b) (f) (c) Operating and storage temperature range -55 to 150 Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.
6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured...



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