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MSC81005

STMicroelectronics
Part Number MSC81005
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Published Jul 6, 2007
Detailed Description MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED REFRACTORY/GOLD...
Datasheet PDF File MSC81005 PDF File

MSC81005
MSC81005

Overview
MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .
.
.
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EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 5.
0 W MIN.
WITH 10 dB GAIN @ 1 GHz .
230 2L STUD (S016) hermetically sealed ORDER CODE MSC81005 BRANDING 81005 PIN CONNECTION www.
DataSheet4U.
com DESCRIPTION The MSC81005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.
The MSC81005 is designed for Class C amplifier applications in the 0.
4 - 1.
2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1.
Collector 2.
Base 3.
Emitter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 18.
75 600 35 200 − 65 to +200 W mA V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.
0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81005 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 200mA 45 3.
5 45 — 15 — — — — — — — — 1.
0 120 V V V mA — Test Conditions Value Min.
Typ.
Max.
Unit POUT ηc GP COB f = 1.
0 GHz f = 1.
0 GHz f = 1.
0 GHz f = 1 MHz PIN = 0.
5 W PIN = 0.
5 W PIN = 0.
5 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 5.
0 50 10 — 6.
6 52 11.
2 — — — — 6.
5 W % dB pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE 2/5 MSC81005 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 0.
5 W VCC = 35 V Normalized to 50 ohms FREQ.
0.
4 GHz 0.
6 GHz 0.
8 GHz 1.
0 GHz 1.
2 GHz ZIN (Ω) ...


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