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APTM100H35FT

Advanced Power Technology
Part Number APTM100H35FT
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM100H35FT Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25...
Datasheet PDF File APTM100H35FT PDF File

APTM100H35FT
APTM100H35FT

Overview
APTM100H35FT Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 S1 Q2 O UT1 O UT2 Q4 G3 S3 G2 S2 NT C1 0/VBUS NT C2 G4 S4 www.
DataSheet4U.
com Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM100H35FT– Rev 0 July, 2004 Tc = 25°C Max ratings 1000 22 17 88 ±30 350 390 25 50 3000 Unit V A V mΩ W A APTM100H35FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA Min 1000 VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800...


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