DatasheetsPDF.com

APTM100H35FT3

Advanced Power Technology
Part Number APTM100H35FT3
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM100H35FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = ...
Datasheet PDF File APTM100H35FT3 PDF File

APTM100H35FT3
APTM100H35FT3

Overview
APTM100H35FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 www.
DataSheet4U.
com 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM100H35FT3– Rev 1 June, 2005 Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V A V mΩ W A APTM100H35FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)