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APTM50DHM38

Advanced Power Technology
Part Number APTM50DHM38
Manufacturer Advanced Power Technology
Description MOSFET Power Module
Published Jul 7, 2007
Detailed Description APTM50DHM38 Asymmetrical - bridge MOSFET Power Module VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Appl...
Datasheet PDF File APTM50DHM38 PDF File

APTM50DHM38
APTM50DHM38


Overview
APTM50DHM38 Asymmetrical - bridge MOSFET Power Module VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application · · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · · · Benefits S4 G4 OUT2 www.
DataSheet4U.
com OUT1 G1 S1 VBUS 0/VBUS · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1–6 APTM50DHM38 – Rev 2 April, 2004 Tc = 25°C APTM50DHM38 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C Typ Max 150 750 38 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance ...



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