DatasheetsPDF.com

NESG2031M05

CEL
Part Number NESG2031M05
Manufacturer CEL
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Published Jul 31, 2007
Detailed Description www.DataSheet4U.com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHN...
Datasheet PDF File NESG2031M05 PDF File

NESG2031M05
NESG2031M05

Overview
www.
DataSheet4U.
com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.
8 dBm at 2 GHz NF = 1.
3 dBm at 5.
2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.
5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance • • M05 DESCRIPTION NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1.
MSG = S21 S12 2.
Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when e...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)