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NESG2031M16

Part Number	NESG2031M16
Manufacturer	CEL
Description	HIGH FREQUENCY TRANSISTOR
Published	Jul 31, 2007
Detailed Description	www.DataSheet4U.com NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHN...
Datasheet	NESG2031M16 PDF File

Overview

www.
DataSheet4U.
com NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.
8 dBm at 2 GHz NF = 1.
3 dBm at 5.
2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.
5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 • • DESCRIPTION NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1...

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