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LP6836P70

Filtronic Compound Semiconductors
Part Number LP6836P70
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED MEDIUM POWER PHEMT
Published Mar 22, 2005
Detailed Description PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GH...
Datasheet PDF File LP6836P70 PDF File

LP6836P70
LP6836P70

Overview
PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.
5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency LP6836P70 • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range.
It utilizes a 0.
25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C* Parameter Saturated Drain-Source Curren...


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