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LP750

Filtronic Compound Semiconductors
Part Number LP750
Manufacturer Filtronic Compound Semiconductors
Description 0.5 W POWER PHEMT
Published Mar 22, 2005
Detailed Description 0.5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm O...
Datasheet PDF File LP750 PDF File

LP750
LP750

Overview
0.
5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.
3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750 • DESCRIPTION AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µm by 750 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP750 also features Si3 N4 passivation and is available in a variety of packages, including SOT89 and P100 packages.
Typical applications include commercial and other types of high-performance power amplifiers, including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.
DIE SIZE: 12.
6X16.
9 mils (320x430 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 3.
3X2.
4 mils (85x60 µm) • ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude Thermal Resistivity frequency=18 GHz Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| |VBDGD| ΘJC Test Conditions VDS = 2 V; VGS = 0 V VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS; PIN = 10 dBm VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -3 V VDS = 2 V; IDS = 4 mA IGS = 4 mA IGD = 4 mA -0.
25 -12 -12 180 Min 180 26.
5 8 Typ 225 28 10 55 400 230 5 -1.
2 -15 -16 65 40 -2.
0 Max 265 Units mA dBm dB % mA mS µA V V V °C/W Phone: (408) 988-1845 Fax: (408) 97...


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