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BLF2022-120

NXP
Part Number BLF2022-120
Manufacturer NXP
Description UHF push-pull power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preli...
Datasheet PDF File BLF2022-120 PDF File

BLF2022-120
BLF2022-120

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 www.
DataSheet4U.
com Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.
2 GHz).
APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap.
The common source is connected to the mounting flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.
1 VDS (V) 28 PL (W) 120 (PEP) Gp (dB) >11 Top view 1 2 BLF2022-1...


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