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BLF2022-125

NXP
Part Number BLF2022-125
Manufacturer NXP
Description UHF power LDMOS transistor
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective speci...
Datasheet PDF File BLF2022-125 PDF File

BLF2022-125
BLF2022-125

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 www.
DataSheet4U.
com Philips Semiconductors Objective specification UHF power LDMOS transistor FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19% – ACPR = −42 dBc at 3.
84 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) • Internally matched for ease of use.
APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.
1 Simplified outli...


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