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RF5110G

RF Micro Devices
Part Number RF5110G
Manufacturer RF Micro Devices
Description 3V GSM POWER AMPLIFIER
Published Aug 29, 2007
Detailed Description www.DataSheet4U.com RF5110G 0 RoHS & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Tri...
Datasheet PDF File RF5110G PDF File

RF5110G
RF5110G

Overview
www.
DataSheet4U.
com RF5110G 0 RoHS & Pb-Free Product Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems • Portable Battery-Powered Equipment • FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz 3V GSM POWER AMPLIFIER Product Description -A3.
00 SQ.
0.
15 C A 2 PLCS The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications.
The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band.
On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation.
The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics.
The RF5110G can be used together with the RF5111 for dual-band operation.
The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space.
Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 1.
00 0.
85 0.
80 0.
65 0.
05 C 1.
50 TYP 2 PLCS 0.
15 C B 0.
05 0.
01 12° MAX 2 PLCS 0.
15 C B -B1.
37 TYP 2 PLCS 0.
15 C A -CDimensions in mm.
0.
10 M C A B SEATING PLANE 2.
75 SQ.
0.
60 0.
24 TYP 0.
45 0.
00 4 PLCS Shaded lead is pin 1.
0.
30 0.
18 1.
65 SQ.
1.
35 0.
23 0.
13 4 PLCS 0.
50 0.
55 0.
30 9 Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features • Single 2.
7V to 4.
8V Supply Voltage • +36dBm Output Power at 3.
5V APC1 APC2 VCC NC • 32dB Gain with Analog Gain Control • 57% Efficiency 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 16 VCC1 GND1 RF IN GND2 1 2 3 4 5 VCC2 15 14 13 • 800MHz to 950MHz Operation • Supports GSM and E-GSM Ordering Information RF5110G 3V GSM Power Amplifier RF5110GPCBA-410Fully A...


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