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RF5112

RF Micro Devices
Part Number RF5112
Manufacturer RF Micro Devices
Description 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER
Published Mar 16, 2016
Detailed Description RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.9mm VCC NC VC1 NC Featu...
Datasheet PDF File RF5112 PDF File

RF5112
RF5112

Overview
RF5112 3V TO 5V, 2.
4GHz TO 2.
5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.
9mm VCC NC VC1 NC Features  Single Power Supply 3.
0V to 5.
0 V  +23dBm, <4%EVM, 250mA at VCC = 5.
0 V  +21dBm, <4.
0%EVM, 185mA atVCC = 3.
3 V  28dB Typical Small Signal Gain  50 Input and Interstage Match- ing  2400MHz to 2500MHz Fre- quency Range Applications  IEEE802.
11b/g/n WiFi Applications  2.
5GHz ISM Band Applications  Commercial and Consumer Sys- tems  Portable Battery-Powered Equip- ment  Spread-Spectrum and MMDS Systems NC 1 16 RF IN 2 RF IN 3 Input Match NC 4 5 15 14 Inter- 1st Stage Match 13 12 RFOUT/ VC2 2nd 11 RF OUT Bias 6 7 10 RF OUT 9 NC 8 NC VREG1 VREG2 PDETECT Functional Block Diagram Product Description The RF5112 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and compact flash applications.
The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.
5GHz OFDM and other spreadspectrum transmitters.
The device is provided in a 3mmx3mmx0.
9mm, 16-pin, QFN with a backside ground.
The RF5112 is designed to maintain linearity over a wide range of supply voltage and power output.
DS110617 Ordering Information RF5112 Standard 25 piece bag RF5112SR Standard 100 piece reel RF5112TR7 Standard 2500 piece reel RF5112WL50PCK-41XFully Assembled Evaluation Board Kit (5.
0V Tune) RF5112WL33PCK-41XFully Assembled Evaluation Board Kit (3.
3V Tune) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC.
BLUETOOTH is a trademark owned by Bluetooth SIG, Inc.
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