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GI9T16

GTM
Part Number GI9T16
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GI9T 16 Description N-CHANNEL ENHA...
Datasheet PDF File GI9T16 PDF File

GI9T16
GI9T16

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GI9T 16 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 25A The GI9T16 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Single Drive Requirement *Capable of 2.
5V gate drive Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
5V Continuous Drain Current, VGS@4.
5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 ...


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