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GI9T18

GTM
Part Number GI9T18
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GI9T 18 Description N-CHANNEL ENHA...
Datasheet PDF File GI9T18 PDF File

GI9T18
GI9T18

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GI9T 18 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 14m 38A The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
*Capable of 2.
5V gate drive *Low Gate Charge Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
5V Continuous Drain Current, VGS@4.
5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 38 24 140 31.
3 0.
25 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range ...


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