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STN1A60

SemiWell Semiconductor
Part Number STN1A60
Manufacturer SemiWell Semiconductor
Description (STN1A60 / STN1A80) Bi-Directional Triode Thyristor
Published Sep 6, 2007
Detailed Description www.DataSheet4U.com SemiWell Semiconductor Bi-Directional Triode Thyristor STN1A60/80 Symbol Features Repetitive Peak...
Datasheet PDF File STN1A60 PDF File

STN1A60
STN1A60

Overview
www.
DataSheet4U.
com SemiWell Semiconductor Bi-Directional Triode Thyristor STN1A60/80 Symbol Features Repetitive Peak Off-State Voltage : 600/800V R.
M.
S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ ○ 3.
T2 ▼ ▲ ○ 2.
Gate 1.
T1 ○ General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-92 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG Parameter ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 58 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 1.
0 9.
1/10 0.
41 1.
0 0.
1 0.
5 6.
0 - 40 ~ 125 - 40 ~ 150 0.
2 800 Units V A A A2s W W A V °C °C g Repetitive Peak Off-State Voltage R.
M.
S On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Apr, 2003.
Rev.
3 copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved.
1/6 STN1A60/80 Electrical Characteristics Symbol Items Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 1.
5 A, Inst.
Measurement Ratings Min.
Typ.
Max.
Unit IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigger Gate Voltage Critical Rate of Rise OffState Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance - - 0.
5 mA - 7 - 1.
6 5 5 V VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.
5 A/ms, VD=2/3 VDRM 0.
2 1.
8 2.
0 5 12 1.
8 1.
8 mA V V V/㎲ mA °C/W °C/W 2.
0 - - Junction to case Junction to Ambient - 4.
0 - 50 120 2/6 STN1A60/80 Fig 1.
Gate Characteristics 10 1 Fig 2.
On-State Voltage 10 1 VGM (6V) 25 ℃ 10 0 PG(AV) (0...


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