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STN1A60

WINSEMI
Part Number STN1A60
Manufacturer WINSEMI
Description Bi-Directional Triode Thyristor
Published May 2, 2016
Detailed Description Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(t...
Datasheet PDF File STN1A60 PDF File

STN1A60
STN1A60

Overview
Features ■ Repetitive Peak off-State Voltage: 600V ■ R.
M.
S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.
2(typ.
)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.
) ■ High Commutation dV/dt.
STN1A60 Logic Level Bi-Directional Triode Thyristor General Description General purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter Value Units VDRM T(RMS) ITSM I2t Peak Repetitive Forward Blocking Voltage(gate open) (Note 1) Forward Current RMS (All Conduction Angles, TL=50℃) Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (tp= 10 ms) 600 1 9.
1/10 0.
41 V A A A2s PGM...


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