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SIGC07T60NC

Infineon Technologies
Part Number SIGC07T60NC
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC07T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • positive tem...
Datasheet PDF File SIGC07T60NC PDF File

SIGC07T60NC
SIGC07T60NC

Overview
www.
DataSheet4U.
com SIGC07T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type SIGC07T60NC VCE 600V ICn 6A Die Size 2.
6 x 2.
6 mm2 Package sawn on foil Ordering Code Q67050-A4134A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.
6 x 2.
6 6.
76 / 4.
3 1.
11 x 1.
78 0.
5 x 0.
7 100 150 0 2249 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm deg Edited by INFINEON Technologies AI PS DD HV3, L 7212-M, Edition 2, 28.
11.
2003 SIGC07T60NC MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 600 1) Unit V A A V °C 18 ±20 -55 .
.
.
+150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min.
VGE=0V, IC =500µA VGE=15V, IC =6A IC =200µA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=20V 600 1.
7 4.
5 2.
0 5.
5 2.
5 6.
5 0.
5 120 µA nA V Value typ.
max.
Unit DYNAMIC CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacit...


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