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SIGC101T170R3

Infineon Technologies
Part Number SIGC101T170R3
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC101T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • sh...
Datasheet PDF File SIGC101T170R3 PDF File

SIGC101T170R3
SIGC101T170R3

Overview
www.
DataSheet4U.
com SIGC101T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700V ICn 75A Die Size 10.
03 x 10.
03 mm2 Package sawn on foil Ordering Code Q67050A4188-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.
03 x 10.
03 8 x ( 3.
82 x 1.
75 ) 1.
18 x 1.
09 100.
6 / 75.
3 190 150 90 136 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L 7771-A, Edition 2, 04.
09.
03 SIGC101T170R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 1) Unit V A A V °C 225 ±20 -55 .
.
.
+150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min.
VGE=0V , IC= 3mA VGE=15V, IC =75A IC =3mA , VGE=VCE VCE=1700V , VGE=0V VCE=0V , VGE=20V 8.
5 1700 1.
6 5.
2 2 5.
8 2.
4 6.
4 4.
33 600 µA nA Ω V Value typ.
max.
Unit ELECTRICAL CHA...


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