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SIGC156T120R2C

Infineon Technologies
Part Number SIGC156T120R2C
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-o...
Datasheet PDF File SIGC156T120R2C PDF File

SIGC156T120R2C
SIGC156T120R2C

Overview
www.
DataSheet4U.
com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM100GD120DN2 Applications: • drives C G E Chip Type VCE ICn Die Size 12.
59 X 12.
59 mm2 Package sawn on foil Ordering Code Q67041A4661-A003 SIGC156T120R2C 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.
59 X 12.
59 8 x ( 3.
98 x 2.
38 ) 1.
46 x 0.
8 158.
5 / 132.
6 200 150 90 82 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm grd Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.
09.
2003 SIGC156T120R2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 300 ±20 -55 .
.
.
+150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min.
VGE=0V , IC=5mA VGE=15V, IC =100A IC =4mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V 5 1200 2.
0 4.
5 2.
5 5.
5 3.
0...


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