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SIGC156T120R2CL

Infineon Technologies
Part Number SIGC156T120R2CL
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low tur...
Datasheet PDF File SIGC156T120R2CL PDF File

SIGC156T120R2CL
SIGC156T120R2CL

Overview
www.
DataSheet4U.
com SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM100GD120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 12.
59 X 12.
59 mm2 Package sawn on foil Ordering Code Q67041A4663-A003 SIGC156T120R2CL 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.
59 X 12.
59 8 x ( 3.
98 x 2.
38 ) 1.
46 x 0.
8 158.
5 / 132.
6 180 150 90 82 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry...


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