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SIGC158T120R3

Infineon Technologies
Part Number SIGC158T120R3
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC158T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • sh...
Datasheet PDF File SIGC158T120R3 PDF File

SIGC158T120R3
SIGC158T120R3

Overview
www.
DataSheet4U.
com SIGC158T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12.
56 x 12.
56 mm2 Package sawn on foil Ordering Code Q67050A4109-A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.
56 x 12.
56 8x(2.
646 x 5.
454) 1.
139 x 1.
139 157.
8 / 128.
1 140 150 90 86 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient tem...


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