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SIGC158T120R3LE

Infineon
Part Number SIGC158T120R3LE
Manufacturer Infineon
Description IGBT
Published Feb 14, 2016
Detailed Description SIGC158T120R3LE IGBT3 Power Chip Features:  1200V Trench & Field Stop technology  low turn-off losses  short tail c...
Datasheet PDF File SIGC158T120R3LE PDF File

SIGC158T120R3LE
SIGC158T120R3LE

Overview
SIGC158T120R3LE IGBT3 Power Chip Features:  1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size SIGC158T120R3LE 1200V 150A 12.
56 x 12.
56 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 12.
56 x 12.
56 8 x (5.
423 x 2.
641) 1.
320 x 0.
821 mm2 157.
8 120 µm 200 mm 156 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies,...


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