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SIGC42T120C

Infineon Technologies
Part Number SIGC42T120C
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  ...
Datasheet PDF File SIGC42T120C PDF File

SIGC42T120C
SIGC42T120C

Overview
IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling SIGC42T120C This chip is used for:  power module BUP 314 Applications:  drives C G E Chip Type SIGC42T120C VCE IC 1200V 25A Die Size 6.
59 x 6.
49 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.
59 x 6.
49 2 x ( 1.
58 x 2.
18 ) 1.
06 x 0.
65 mm2 42.
8 200 µm 150 mm 334 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, L7151MM, Edition 2.
1, 14.
10.
2008 Maximum Ratings Parameter SIGC42T120C Symbol Value Unit Collector-Emitter voltage, Tvj =25 C DC collector current, limited by Tvj max VCE IC 1200 1) Pulsed collector current, tp limited by Tvj max Ic,puls 75 Gate emitter voltage VGE 20 Junction temperature range Operating junction temperature Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 150°C Tvj Tvj tSC -55 .
.
.
+175 -55.
.
.
+150 10 Reverse bias safe operating area 2 ) (RBSOA) 1 ) depending on thermal properties of assembly I C , m a x = 50A, V C E , m a x = 1200V Tvj  1 5 0 ° C 2 ) not subject to production test - verified by design/characterization V A A V °C C µs Static Characteristic (tested on wafer), Tvj =25 C Parameter Symbol Conditions Value Unit min.
typ.
max.
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate-Emitter threshold voltage Zero gate voltage collector current Gate-Emitter leakage current Integrated gate resistor V(BR)CES VCEsat VGE(th) ICES IGES rG V...


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