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LNA2601L

Panasonic Semiconductor
Part Number LNA2601L
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 ...
Datasheet PDF File LNA2601L PDF File

LNA2601L
LNA2601L

Overview
Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.
5±0.
3 2.
4 1.
1 0.
8 max.
1.
1 0.
8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.
0±0.
3 ø1.
1 R0.
5 1.
95±0.
25 1.
4±0.
2 0.
9 0.
5 12 min.
Not Soldered 2.
15 max.
2-0.
5±0.
15 0.
3±0.
15 2 2.
54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.
1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.
5 typ 950 50 max Unit mW nm nm 1.
5 10 35 20 V µA pF deg.
1 Infrared Light Emitting Diodes LNA2601L IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 –1 10 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.
4 0.
8 1.
2 1.
6 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.
6 VF — Ta 10 3 ∆PO — Ta IF = 20mA ∆PO VF (V) 10 (1) 1.
2 10mA 1mA Relative radiant power 1 (2) 0.
8 Relative radiant power 120 Forward voltage ∆PO 10 2 10 – 25 IF = 50mA 10 –1 0.
4 10 –2 1 10 10 2 10 3 0 – 40 0 40 80 0 20 40 60 80 100 Pulse forward current IFP (m...


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