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LNA2603F

Panasonic Semiconductor
Part Number LNA2603F
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical...
Datasheet PDF File LNA2603F PDF File

LNA2603F
LNA2603F

Overview
Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.
8 max.
For optical control systems 1.
5±0.
2 Features High-power output, high-efficiency : PO = 6 mW (typ.
) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.
) Long lifetime, high reliability Thin side-view type package 3.
9±0.
25 4.
5±0.
15 3.
5±0.
15 2.
1±0.
15 1.
6±0.
15 0.
8±0.
1 12.
8 min.
(2.
95) 2-1.
2±0.
3 2-0.
45±0.
15 0.
45±0.
15 1 2.
54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.
5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.
1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3 typ 6 940 50 1.
3 45 1 1 80 max Unit mW nm nm 1.
6 10 V µA pF µs µs deg.
1 Infrared Light Emitting Diodes LNA2603F IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 10 –1 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 1 10 2 60 10 –1 10 40 20 10 –2 1 0 – 25 0 20 40 60 80 100 10 –3 10 –2 10 –1 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.
6 VF — Ta 10 IF = 100mA ∆PO — Ta IF = 50mA Relative radiant power ∆PO VF (V) 10 2 1.
2 50mA 1mA 0.
8 Forward voltage 10 (1) Relative radiant power ∆PO 1 1 (2) 0.
4 10 –1 10 –2 1 10 10 2...


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