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G3407

GTM
Part Number G3407
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 19, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :20...
Datasheet PDF File G3407 PDF File

G3407
G3407


Overview
www.
DataSheet4U.
com Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS(ON) ID -30V 52m -4.
1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
*Lower Gate Charge *Small Package Outline *RoHS Compliant Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 ±20 -4.
1 -3.
5 -20 1.
38 0.
01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max.
Unit /W G3407 Page: 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) ISSUED DATE :2007/01/15 REVISED DATE : unless otherwise specified) Min.
-30 -1.
0 Typ.
8.
2 7 3.
1 3 8.
6 5 28.
2 13.
5 700 120 75 10 Max.
-3.
0 ±100 -1 -5 52 87 840 pF ns nC Unit V V S nA uA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= ±20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-4.
1A VGS=-4.
5V, ID=-3.
0A ID=-4A VDS=-15V VGS=-4.
5V VDS=-15V VGS=-10V RG=3 RL=3.
6 VGS=0V VDS=-15V f=1.
0MHz f=1.
0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Tim...


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