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GBC327

GTM
Part Number GBC327
Manufacturer GTM
Description PNP EPITAXIAL TRANSISTOR
Published Sep 19, 2007
Detailed Description www.DataSheet4U.com ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B GBC327 Description Features PNP SILICON TRANSIST...
Datasheet PDF File GBC327 PDF File

GBC327
GBC327


Overview
www.
DataSheet4U.
com ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B GBC327 Description Features PNP SILICON TRANSISTOR The GBC327 is designed for drive and output-stages of audio amplifiers.
High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC337 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF.
A S1 b b1 C e1 e b C Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51 REF.
D E L e1 e Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings -50 -45 -5 -800 625 5.
0 1.
5 12 -55 ~ +150 200 83.
3 Unit V V V mA mW mW/ W mW/ /W /W Thermal Resistance, Junction to Ambien...



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