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GBC338

Part Number	GBC338
Manufacturer	GTM
Description	NPN SILICON TRANSISTOR
Published	Sep 19, 2007
Detailed Description	www.DataSheet4U.com ISSUED DATE :2005/10/21 REVISED DATE : GBC338 Description Features NPN SILICON TRANSISTOR The GBC...
Datasheet	GBC338 PDF File

Overview

www.
DataSheet4U.
com ISSUED DATE :2005/10/21 REVISED DATE : GBC338 Description Features NPN SILICON TRANSISTOR The GBC338 is designed for drive and output-stages of audio amplifiers.
High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF.
A S1 b b1 C e1 e b C Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51 REF.
D E L e1 e Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings 30 25 5 800 625 5.
0 1.
5 12 -55 ~ +150 200 83.
3 Unit V V V mA mW mW/ W mW/ /W /W Thermal Resistance, Junction to Ambient Thermal Resista...

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