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GBC817

Part Number	GBC817
Manufacturer	GTM
Description	NPN SILICON TRANSISTOR
Published	Sep 19, 2007
Detailed Description	www.DataSheet4U.com GBC817 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GBC817 is ...
Datasheet	GBC817 PDF File

Overview

www.
DataSheet4U.
com GBC817 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 50 45 5 800 225 V V V mA mW Unit Characteristics Symbol BVEBO BVCEO BVCES ICES IEBO *VCE(sat) VBE(on) hFE fT Cob at Ta = 25 Min.
5 45 50 100 Typ.
100 Max.
100 100 700 1.
2 630 12 MHz pF Unit V V V nA nA mV V IE=-100uA IC=10mA IC=100uA VCE=25V VEB=4V IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=5V, ...

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