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GBC856

Part Number	GBC856
Manufacturer	GTM
Description	PNP EPITAXIAL TRANSISTOR
Published	Sep 19, 2007
Detailed Description	www.DataSheet4U.com GBC856 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC856 is ...
Datasheet	GBC856 PDF File

Overview

www.
DataSheet4U.
com GBC856 Description Package Dimensions 1/2 P NP E PITAX I AL P L ANAR T RANS ISTO R The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -80 -65 -5 -100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob at Ta = 25 Min.
-80 -65 -5 -600 75 Typ.
-75 -250 -700 -850 150 4.
5 Max.
-15 -300 -650 -750 -820 800 MHz pF Unit V V V nA mV mV mV mV mV mV IC=-100uA IC...

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