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GTC9922E

GTM
Part Number GTC9922E
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2007/01/25 REVISED DATE : GTC9922E N-CHANNEL ENHANCEMENT MODE...
Datasheet PDF File GTC9922E PDF File

GTC9922E
GTC9922E

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2007/01/25 REVISED DATE : GTC9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 15m 6.
8A The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low on-resistance *Capable of 2.
5V gate drive *Optimal DC/DC battery application *Surface mount package Description Features Package Dimensions REF.
A A1 b c D Millimeter Min.
0.
05 0.
19 0.
09 2.
90 Max.
1.
20 0.
15 0.
30 0.
20 3.
10 REF.
E E1 e L S Millimeter Min.
6.
20 4.
30 0.
45 0° Max.
6.
60 4.
50 0.
75 8° 0.
65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.
5V Continuous Drain Current , VGS@4.
5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±12 6.
8 5.
4 25 1 0.
008 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating ...


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