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GTC9926E

GTM
Part Number GTC9926E
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2007
Detailed Description www.DataSheet4U.com ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET ...
Datasheet PDF File GTC9926E PDF File

GTC9926E
GTC9926E

Overview
www.
DataSheet4U.
com ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTC9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.
6A The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low on-resistance *Capable of 2.
5V gate drive *Low drive current *Surface mount package Description Features Package Dimensions REF.
A A1 b c D Millimeter Min.
Max.
0.
05 0.
19 0.
09 2.
90 1.
20 0.
15 0.
30 0.
20 3.
10 REF.
E E1 e L S Millimeter Min.
Max.
6.
20 4.
30 0.
45 0° 6.
60 4.
50 0.
75 8° 0.
65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 4.
6 3.
7 20 1 0.
008 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature...


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