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2SJ290

Hitachi Semiconductor
Part Number 2SJ290
Manufacturer Hitachi Semiconductor
Description SILICON P-CHANNEL MOSFET
Published Nov 22, 2007
Detailed Description www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 ...
Datasheet PDF File 2SJ290 PDF File

2SJ290
2SJ290

Overview
www.
DataSheet4U.
com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1.
Gate 2.
Drain 3.
Source 4.
Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings –60 ±20 –30 –120 –30 –30 77 75 150 –55 to +150 Unit V V A A A A mJ W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω www.
DataSheet4U.
com 2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min –60 Typ — Max — Unit V Test conditions ID = –10 mA, VGS = 0 IG = ±200 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— ——————————————————————————————————————————— ±20 — — V ———————————————————————————————————...


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