DatasheetsPDF.com

6N60

UTC
Part Number 6N60
Manufacturer UTC
Description 600V N-CHANNEL POWER MOSFET
Published Dec 12, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power...
Datasheet PDF File 6N60 PDF File

6N60
6N60


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 6N60 6.
2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60L-TA3-T 6N60G-TA3-T TO-220 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TF2-T 6N60G-TF2-T TO-220F2 6N60L-TF3T-T 6N60G-TF3T-T TO-220F3 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TQ2-T 6N60G-TQ2-T TO-263 6N60L-TQ2-R 6N60G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-117.
L 6N60  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-117.
L 6N60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 6.
2 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 6.
2 A IDM 24.
8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 440 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 ns TO-220/TO-263 125 W Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 40 W TO-220F2 42 W TO-251S 55 W Junction Temperature TJ +150 °C Operating Temperature TOP...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)