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SSM9960GM

Silicon Standard
Part Number SSM9960GM
Manufacturer Silicon Standard
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Jan 30, 2008
Detailed Description www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate char...
Datasheet PDF File SSM9960GM PDF File

SSM9960GM
SSM9960GM


Overview
www.
DataSheet4U.
com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 20mΩ 7.
8A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9960M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7.
8 6.
2 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit °C/W 8/21/2004 Rev.
2.
01 www.
SiliconStandard.
com 1 of 6 www.
DataSheet4U.
com SSM9960M/GM Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
40 1 - Typ.
0.
032 Max.
Units 20 32 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆BV DSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.
5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=7A 25 14.
7 7.
1 6.
8 11.
5 6.
3 28.
2 12.
6 1725 235 145 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) D...


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