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SSM9960H

Silicon Standard
Part Number SSM9960H
Manufacturer Silicon Standard
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Published Nov 14, 2011
Detailed Description SSM9960(G)H,J www.DataSheet.co.kr N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fas...
Datasheet PDF File SSM9960H PDF File

SSM9960H
SSM9960H

Overview
SSM9960(G)H,J www.
DataSheet.
co.
kr N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 40V 16mΩ 42A S Description The SSM9960H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM9960J in TO-251, is available for low-footprint vertical G D S TO-252 (H) This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GH or SSM9960GJ.
G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 ± 20 42 26 195 45 0.
36 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
8 110 Unit °C/W °C/W 11/16/2004 Rev.
2.
1 www.
SiliconStandard.
com 1 of 5 www.
DataSheet.
co.
kr SSM9960(G)H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
40 1 - Typ.
0.
032 Max.
Units 16 25 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.
5V, ID=18A VDS=VGS, ID=250uA VDS=10V, ID=20A 30 18 6 12 9 110 23 10 1500 250 180 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=40V, V...


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