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D2012

Toshiba Semiconductor
Part Number D2012
Manufacturer Toshiba Semiconductor
Description 2SD2012
Published Feb 12, 2008
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: ...
Datasheet PDF File D2012 PDF File

D2012
D2012

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 2A / IB = 0.
2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 7 3 0.
5 2.
0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.
g.
the applicatio...


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