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2N6093

ASI
Part Number 2N6093
Manufacturer ASI
Description NPN SILICON RF POWER TRANSISTOR
Published Feb 18, 2008
Detailed Description www.DataSheet4U.com 2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gai...
Datasheet PDF File 2N6093 PDF File

2N6093
2N6093

Overview
www.
DataSheet4U.
com 2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 10 A 35 V 83.
3 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 1.
50 C/W O O O O ¼-28 UNF Thread 1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode NONE CHARACTERISTICS SYMBOL BVCEO BVCES ICES BVEBO hFE VF hfe COB PIE GPE ηC IMD TC = 25 C O TEST CONDITIONS IC = 200 mA IC = 200 mA VCE = 60 V IE = 20 mA VCE = 6.
0 V IF = 10 mA VCE = 28 V VCB = 30 V VCC = 28 V f = 30 MHz VCC = 28 V IC = 20 mA POE = 75.
0 W IC = 20 mA IC = 1.
0 A f = 50 MHz f = 1.
0 MHz POE = 37.
5 W IC = 5.
0 A TC = 55 C O MINIMUM 35 70 TYPICAL MAXIMUM UNITS V V 30 3.
5 20 0.
8 2.
0 250 1.
88 3.
75 13 40 -30 mA V --V --pF W dB % dB POE = 75.
0 W f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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